Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy
β Scribed by H. Li; T. Daniels-race; Z. Wang
- Book ID
- 124066874
- Publisher
- American Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 396 KB
- Volume
- 74
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.123559
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π SIMILAR VOLUMES
Highly strained InAs/InP heterostructures and lnxGa j\_xAs/lnAs single quantum wells on lnP(100) substrates were grown by molecular beam epitaxy. The fabricated heterostructures were investigated by means of the selected-area X-ray photoelectron spectroscopy (SAXPS) depth profiling technique. The de
## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasmaβassisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between