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In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices

✍ Scribed by G.N. Maracas; J.L. Edwards; D.S. Gerber; R. Droopad

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
454 KB
Volume
63
Category
Article
ISSN
0169-4332

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## Abstract Metalorganic vapor phase epitaxy of InN layers on sapphire was studied in‐situ by spectroscopic ellipsometry (SE), ex‐situ atomic force microscopy and optical microscopy. Surface morphology has been largely improved by using nitrogen instead of hydrogen as carrier gas during sapphire ni