We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo
One-step in-situ quantum dots via molecular beam epitaxy
β Scribed by K.C. Rajkumar; K. Kaviani; P. Chen; A. Madhukar; K. Rammohan; D.H. Rich
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 108 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0022-0248
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