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In situ RHEED, AFM, and REM investigations of the surface recovery of MBE-grown GaAs(0 0 1)-layers during growth interruptions

✍ Scribed by T. Franke; P. Kreutzer; Th. Zacher; W. Naumann; R. Anton

Book ID: 108342793
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 744 KB
Volume: 193
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)00502-8

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In situ RHEED, AFM, and REM investigations of the surface recovery of MBE-grown GaAs(0&#xa0;0&#xa0;1)-layers during growth interruptions

In situ RHEED, AFM, and REM investigations of the surface recovery of MBE-grown GaAs(0 0 1)-layers during growth interruptions