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Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction

✍ Scribed by Wolfgang Braun; Vladimir M. Kaganer; Bernd Jenichen; Dillip K. Satapathy; Xiangxin Guo; Brad P. Tinkham; Klaus H. Ploog

Book ID: 111713165
Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 408 KB
Volume: 278
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.12.045

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Surface kinetics of GaAs(0&#xa0;0&#xa0;1), InAs(0&#xa0;0&#xa0;1) and GaSb(0&#xa0;0&#xa0;1) during MBE growth studied by in situ surface X-ray diffraction

Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction