✦ LIBER ✦

In-situ phosphorous-doped VLPCVD polysilicon layers for polysilicon thin-film transistors

✍ Scribed by Sarret, M.; Liba, A.; Bonnaud, O.; Le Bihan, F.; Fortin, B.; Pichon, L.; Raoult, F.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical conductivity behaviour of thi

✍ M. Mokhtari; B. Fortin; O. Bonnaud; A. Liba; M. Sarret 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 486 KB

Physical models for degradation effects

✍ Hack, M.; Lewis, A.G.; Wu, I.-W. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 828 KB

A new analytical threshold voltage model

✍ Weijing Wu; Ruohe Yao; Xueren Zheng 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 388 KB

Effects of the in-situ drain doping on h

✍ L. Pichon; F. Raoult; T. Mohamed-Brahim; O. Bonnaud; H. Sehil 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 485 KB

Rapid thermal oxidation of highly in sit

✍ S Kallel; B Semmache; M Lemiti; A Laugier 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 172 KB

Low temperature (≦600°C) unhydrogenated

✍ L. Pichon; F. Raoult; K. Mourgues; K. Kis-Sion; T. Mohammed-Brahim; O. Bonnaud 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 344 KB