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Low temperature (≦600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays

✍ Scribed by L. Pichon; F. Raoult; K. Mourgues; K. Kis-Sion; T. Mohammed-Brahim; O. Bonnaud


Book ID
108389022
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
344 KB
Volume
296
Category
Article
ISSN
0040-6090

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