✦ LIBER ✦

In-situ optical monitoring of surface morphology and stoichiometry during GaN metal organic vapor phase epitaxy

✍ Scribed by Naoki Kobayashi; Yasuyuki Kobayashi

Book ID: 104309150
Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 152 KB
Volume: 159-160
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(00)00116-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optical monitoring of technological para

Optical monitoring of technological parameters in metal-organic vapor-phase epitaxy

✍ P. V. Volkov; A. V. Goryunov; V. M. Danil’tsev; A. Yu. Luk’yanov; D. A. Pryakhin 📂 Article 📅 2008 🏛 Pleiades Publishing 🌐 English ⚖ 153 KB

In-Situ Monitoring of GaN Growth by Hydr

In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

✍ Martin, D. ;Carlin, J.F. ;Wagner, V. ;B�hlmann, H.J. ;Ilegems, M. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 113 KB 👁 2 views

In-situ monitoring and control of surfac

In-situ monitoring and control of surface processes in metalorganic vapor phase epitaxy by surface photo-absorption

✍ Naoki Kobayashi 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 920 KB

In-situ optical monitoring of the decomp

In-situ optical monitoring of the decomposition process of gaseous sources in metal-organic chemical vapor deposition and atomic layer epitaxy

✍ Naoki Kobayashi; Yasuyuki Kobayashi; Yoshiharu Yamauchi; Yoshiji Horikoshi 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 420 KB

Suppression of Thermal Convection and It

Suppression of Thermal Convection and Its Effect on Growth of GaN in Metal Organic Vapor Phase Epitaxy

✍ Gang Li; Soo J. Chua; Wen Wang 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 194 KB 👁 2 views

Selectivity enhancement by hydrogen addi

Selectivity enhancement by hydrogen addition in selective area metal-organic vapor phase epitaxy of GaN and InGaN

✍ Shioda, Tomonari ;Sugiyama, Masakazu ;Shimogaki, Yukihiro ;Nakano, Yoshiaki 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 407 KB

## Abstract Selective area metal‐organic vapor phase epitaxy (SA‐MOVPE) allows in‐plane control of layer composition and thickness. The use of relatively wide (>10 µm) selective masks brings about large wavelength modulation, taking advantage of vapor‐phase diffusion of precursors. The wide masks,