𝔖 Bobbio Scriptorium
✦   LIBER   ✦

In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry

✍ Scribed by Yoshitaka Taniyasu; Akihiko Yoshikawa

Book ID
107452694
Publisher
Springer US
Year
2001
Tongue
English
Weight
193 KB
Volume
30
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

In Situ Monitoring of GaN Growth in Mult
In Situ Monitoring of GaN Growth in Multiwafer MOVPE Reactors
✍ LΓΌnenbΓΌrger, M. ;Protzmann, H. ;Heuken, M. ;JΓΌrgensen, H. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 191 KB πŸ‘ 2 views

Normal incidence reflectivity measurements were carried out in an AIX 2000G3HT Multiwafer Planetary Reactor 1 MOVPE system, a large scale production tool for GaN-based devices. In situ monitoring was used to investigate nucleation behaviour, temperature dependence of GaN growth, and the deposition o