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Influence of N2 carrier gas on surface stoichiometry in GaN MOVPE studied by surface photoabsorption

โœ Scribed by Kobayashi, Yasuyuki; Kobayashi, Naoki


Book ID
108342710
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
121 KB
Volume
189-190
Category
Article
ISSN
0022-0248

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