In n-type silicon the recombination strength of most metallic impurities is neatly smaller than in p-type, due to asymmetric capture cross-sections of these impurities for charge carriers. That is true for several impurities (Fe, Ni, Co, Al) but not for Cr. In this paper we try to demonstrate that C
โฆ LIBER โฆ
Influence of SiO2surface passivation on carrier lifetimes in n-type Hg0.7Cd0.3Te
โ Scribed by J. Schilz; R. Hellos; J. Ziegler
- Publisher
- Springer US
- Year
- 1994
- Tongue
- English
- Weight
- 216 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0957-4522
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