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In situ investigation by IR ellipsometry of the growth and interfaces of amorphous silicon and related materials

✍ Scribed by R. Ossikovski; H. Shirai; B. Drévillon

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 373 KB
Volume: 234
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(93)90286-x

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