The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED

✍ Scribed by W.T. Taferner; A. Bensaoula; E. Kim; A. Bousetta

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 508 KB
• Volume: 164
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(96)00020-6