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In-situ growth monitoring by spectroscopy ellipsometry of MOCVD cubic-GaN(001)

✍ Scribed by A. Montaigne Ramil; K. Schmidegg; A. Bonanni; H. Sitter; D. Stifter; Li Shunfeng; D.J. As; K. Lischka

Book ID: 113936781
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 104 KB
Volume: 455-456
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2004.01.036

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## Abstract Metal Organic Chemical Vapor Deposition (MOCVD) is nowadays the most frequently used industrial method for growing III‐nitrides. The possible spectrum of in‐situ diagnostic tools is quite narrow because the MOCVD growth process excludes all techniques based on ultra high vacuum conditio