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In situ film thickness and temperature control of molecular beam epitaxy growth by pyrometric interferometry

✍ Scribed by F.G. Boebel; H. Möller; B. Hertel; H. Grothe; G. Schraud; St. Schröder; P. Chow


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
690 KB
Volume
150
Category
Article
ISSN
0022-0248

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The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ®lms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of re¯ection high-energy ele