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In-depth exploration of Si-SiO2 interface traps in MOS transistors using the charge pumping technique

✍ Scribed by Bauza, D.; Maneglia, Y.

Book ID
114537086
Publisher
IEEE
Year
1997
Tongue
English
Weight
159 KB
Volume
44
Category
Article
ISSN
0018-9383

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In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of