Modeling MOS capacitors to extract Si—SiO2interface trap densities in the presence of arbitrary doping profiles

✍ Scribed by Bennett, H.S.; Gaitan, M.; Roitman, P.; Russell, T.J.; Suehle, J.S.

• Book ID: 114595577
• Publisher: IEEE
• Year: 1986
• Tongue: English
• Weight: 895 KB
• Volume: 33
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1986.22565