✦ LIBER ✦

Three-level charge pumping study of radiation-induced defects at SiSiO2 interface in submicrometer MOS transistors

✍ Scribed by Jean-Luc Autran; Bernard Balland; Daniel Babot

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

In-depth exploration of Si-SiO2 interfac

✍ Bauza, D.; Maneglia, Y. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 159 KB

Modelling of radiation-induced charge tr

✍ Tkachev, Yu. D. ;Lysenko, V. S. ;Turchanikov, V. I. 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 508 KB

DLTS study of annihilation of oxidation

✍ N. Shashank, Sanjeev K. Gupta, K. V. Madhu, J. Akhtar, R. Damle 📂 Article 📅 2011 🏛 Springer-Verlag 🌐 English ⚖ 241 KB