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Modelling of radiation-induced charge trapping at the Si*SiO2 interface of MOS structures

✍ Scribed by Tkachev, Yu. D. ;Lysenko, V. S. ;Turchanikov, V. I.

Publisher: John Wiley and Sons
Year: 1993
Tongue: English
Weight: 508 KB
Volume: 140
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211400113

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