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Impurity profiles in thin, lightly doped, vacuum diffused layers of silicon

✍ Scribed by Batdorf, B.; Lee, L.; Wiegmann, W.


Book ID
117903901
Publisher
Institute of Electrical and Electronics Engineers
Year
1962
Tongue
English
Weight
197 KB
Volume
9
Category
Article
ISSN
0096-2430

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Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s