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Distribution profiles of diffused layers in silicon

โœ Scribed by N.D. Arora; D.J. Roulston; S.G. Chamberlain


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
306 KB
Volume
25
Category
Article
ISSN
0038-1101

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Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s