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New mechanism of impurity conduction in lightly doped crystalline noncompensated silicon

✍ Scribed by A. P. Mel’nikov; Yu. A. Gurvich; S. A. Shevchenko; L. N. Shestakov; L. I. Men’shikov


Book ID
110129959
Publisher
SP MAIK Nauka/Interperiodica
Year
2002
Tongue
English
Weight
55 KB
Volume
75
Category
Article
ISSN
0021-3640

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## Abstract Temperature‐dependent dielectric and conduction properties of the impurity‐doped and gamma‐irradiated samples of TlInS~2~ semiconductor‐ferroelectric with incommensurate phase are presented. As found, in both cases a stable relaxor state is emerging in the material with temperature prov