Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity-doped gamma-irradiated incommensurate TlInS2
✍ Scribed by Sardarly, R. M. ;Mamedov, N. T. ;Wakita, K. ;Shim, Y. ;Nadjafov, A. I. ;Samedov, O. A. ;Zeynalova, E. A.
- Book ID
- 105364001
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 244 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Temperature‐dependent dielectric and conduction properties of the impurity‐doped and gamma‐irradiated samples of TlInS~2~ semiconductor‐ferroelectric with incommensurate phase are presented. As found, in both cases a stable relaxor state is emerging in the material with temperature provided that the central ion in InS~4~ tetrahedron is replaced by an impurity atom such as Mn or Cr, or radiation dose exceeds 400 Mrad. Same as NMR‐studies, the present work drives to a conclusion that In‐displacements are among the components of the order parameter of the incommensurate phase transition. The origin of the non‐activated conductivity observed in the relaxor state of TlInS~2~ is assumed to be resonance tunneling executed by charge carriers from electron levels in the band gap through potential barriers created by incommensurate superstructure. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)