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Improving the quality of microelectronic devices by strained layer epitaxy

✍ Scribed by Heinz Beneking

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
536 KB
Volume
20
Category
Article
ISSN
0921-5107

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## Abstract Different homo epitaxial 4H‐SiC commercial wafers were undergone hydrogen etching process that was developed in the reaction chamber of a Hot Wall Chemical Vapor Deposition (HWCVD) reactor. We have studied the effects of physical desorption to point out the morphology and the structural