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Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy — comparison of growth modes and surface quality

✍ Scribed by Y.C. Chen; P.K. Bhattacharya; J. Singh


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
438 KB
Volume
111
Category
Article
ISSN
0022-0248

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