Growth of strained InGaAs/GaAs by molecular beam epitaxy: a surface morphology, Raman spectroscopy and photoluminescence combined study

✍ Scribed by Soon Fatt Yoon

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 440 KB
• Volume: 78
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/0169-4332(94)90028-0