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Improvement on epitaxial grown of InN by migration enhanced epitaxy

✍ Scribed by Lu, Hai; Schaff, William J.; Hwang, Jeonghyun; Wu, Hong; Yeo, Wesley; Pharkya, Amit; Eastman, Lester F.

Book ID: 121512099
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 273 KB
Volume: 77
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1318235

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## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam