Effect of different strain reducing laye
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S.P. Ryu; N.K. Cho; J.Y. Lim; W.J. Choi; J.D. Song; J.I. Lee; Y.T. Lee; C.G. Par
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Article
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2010
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Elsevier Science
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English
β 449 KB
We investigated the effect of InGaAs and AlGaAs combination strain reducing layers on InAs quantum dots (QDs) grown by migration enhanced epitaxy. The samples were examined by cross-sectional transmission electron microscopy, low-temperature and power dependent photoluminescence (PL). We observed th