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Single quantum well photoluminescence in ZnSe/GaAs/AlGaAs grown by migration‐enhanced epitaxy

✍ Scribed by Kobayashi, Naoki

Book ID
118212862
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
662 KB
Volume
55
Category
Article
ISSN
0003-6951

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Photoluminescence and photoluminescence
Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy
✍ H. Nakashima; T. Takeuchi; K. Inoue; T. Fukunaga; D. Bimberg; J. Christen 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 66 KB

We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show