Photoluminescence from GaAs/AlGaAs quantum wells with InAs monomolecular planes grown by flow-rate modulation epitaxy
β Scribed by Michio Sato; Yoshiji Horikoshi
- Book ID
- 118363441
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 398 KB
- Volume
- 228
- Category
- Article
- ISSN
- 0039-6028
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We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show
Low-temperature photoluminescence measurements were carried out to assess the changes in the properties of strained GaAs/InGaAs/GaAs multi-quantum-wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without growth interruption at the heterointerfaces. Sharp exci