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InGaN quantum dots grown by MOVPE via a droplet epitaxy route

✍ Scribed by J.H Rice; R.A Oliver; J.W Robinson; J.D Smith; R.A Taylor; G.A.D Briggs; M.J Kappers; C.J Humphreys; S Yasin

Book ID: 108240633
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 250 KB
Volume: 21
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2003.11.074

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## Abstract Self‐assembled InGaN quantum dots were grown in the Stranski–Krastanov mode by plasma‐assisted molecular beam epitaxy. The average dot height, diameter and density are 3 nm, 30 nm and 7 × 10^10^ cm^–2^, respectively. The dot density was found to decrease as the growth temperature increa