✦ LIBER ✦

Improved device performance by migration-enhanced epitaxy

✍ Scribed by Pin Ho; S.C. Wang; T. Yu; J.M. Ballingall; P.A. Martin; K.H.G. Duh; S.M.J. Liu; G.A. Hutchins; E.L. Hall

Book ID: 107791846
Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 492 KB
Volume: 111
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(91)90977-d

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Improvement on epitaxial grown of InN by

Improvement on epitaxial grown of InN by migration enhanced epitaxy

✍ Lu, Hai; Schaff, William J.; Hwang, Jeonghyun; Wu, Hong; Yeo, Wesley; Pharkya, A 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 273 KB

quantum dots grown by migration-enhanced

quantum dots grown by migration-enhanced epitaxy

✍ Gong, Y.; MacDonald, W.; Neumark, G. F.; Tamargo, M. C.; Kuskovsky, Igor L. 📂 Article 📅 2008 🏛 The American Physical Society 🌐 English ⚖ 377 KB

Fabrication of AlAs/Al/AlAs heterostruct

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy

✍ Takafumi Yao; Hiroaki Nakahara; Hirofumi Matuhata; Yasumasa Okada 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 830 KB

Electrical properties of low-temperature

Electrical properties of low-temperature GaAs grown by molecular beam epitaxy and migration enhanced epitaxy

✍ Kai Zhang; D. L. Miller 📂 Article 📅 1993 🏛 Springer US 🌐 English ⚖ 394 KB

Area-selective epitaxy of GaAs by migrat

Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources

✍ A. Kawaharazuka; I. Yoshiba; Y. Horikoshi 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 222 KB

Enhanced CW performance of the interband

Enhanced CW performance of the interband cascade laser using improved device fabrication

✍ Bradshaw, J.L.; Pham, J.T.; Yang, R.Q.; Bruno, J.D.; Wortman, D.E. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 85 KB