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Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources

✍ Scribed by A. Kawaharazuka; I. Yoshiba; Y. Horikoshi

Book ID: 103819556
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 222 KB
Volume: 255
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.07.033

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