Erratum to “Area selective epitaxy of InAs on GaAs(001) and GaAs(111)A by migration enhanced epitaxy” [J. Crystal Growth 323 (2011) 9–12]

✍ Scribed by M. Zander; J. Nishinaga; K. Iga; Y. Horikoshi

• Book ID: 116630032
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 306 KB
• Volume: 335
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2011.09.029