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Improvement of hot-carrier-reliability by deuterium termination of Si/SiO2 interface defects

✍ Scribed by H. Takahashi; H. Yamada-Kaneta

Book ID: 108418090
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 92 KB
Volume: 216
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(03)00422-7

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