Electrical switching and noise spectrum of Si-SiO2 interface defects generated by hot electrons

Hydrogen and hot electron defect creatio

Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors

✍ Blair R. Tuttle; William McMahon; Karl Hess 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 82 KB

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si