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Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing

โœ Scribed by K. Xie; C. R. Wie; J. A. Varriano; G. W. Wicks

Book ID
112811887
Publisher
Springer US
Year
1994
Tongue
English
Weight
501 KB
Volume
23
Category
Article
ISSN
0361-5235

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โœ Na Li; Ning Li; W Lu; X.Q Liu; X.Z Yuan; Z.F Li; H.F Dou; S.C Shen; Y Fu; M Will ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 177 KB

We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 โ€ข C for 30 s). The photolumine