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Photoluminescence characterization of the effects of rapid thermal annealing on AlGaAs/GaAs modulation-doped quantum wells

✍ Scribed by Ananth Dodabalapur; B. G. Streetman


Book ID
112818472
Publisher
Springer US
Year
1990
Tongue
English
Weight
551 KB
Volume
19
Category
Article
ISSN
0361-5235

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We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 β€’ C for 30 s). The photolumine