We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 β’ C for 30 s). The photolumine
β¦ LIBER β¦
Modification of the shapes of GaAs/AlGaAs quantum wells using rapid thermal annealing
β Scribed by Emil S. Koteles; B. Elman; R.P. Holmstrom; P. Melman; J.Y. Chi; Xin Wen; J. Powers; D. Owens; S. Charbonneau; M.L.W. Thewalt
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 448 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0749-6036
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