Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape

✍ Scribed by J. Šoltýs; R. Kúdela; M. Kučera; P. Eliáš; J. Novák; V. Cambel; I. Vávra; I. Kostič

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 594 KB
• Volume: 316
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.12.016

✦ Synopsis

We deposited an AlGaAs/GaAs quantum well (QW) structure by MOCVD on [0 1 1]-aligned pyramids on (1 0 0) semi-insulating GaAs substrate. The pyramids were either flat-top or blade-sharp. They were confined at the sides by facets A and B were tilted to (1 0 0) at $ 301 and $ 451, respectively. The AlGaAs/ GaAs QW structure overgrew the pyramids continuously. Facets A were fast-growing and facets B were slow growing. The TEM cross-sectional observation showed the GaAs QW layer on facets B was $ 10 nm thick. AFM analysis showed that overgrown facets A were rougher than facets B (RMS $ 20 nm). A photoluminescence signal corresponding to e1-hh1 transition in QW, with full width at half maximum of 17.6 meV, was detected.