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Growth and characterization of digital and compositionally graded AlGaAs/GaAs non-rectangular quantum wells

✍ Scribed by S.M. Wang; T.G. Andersson; W.Q. Chen; U. Södervall; J. Thordson


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
643 KB
Volume
135
Category
Article
ISSN
0022-0248

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Growth and characterization of AlGaAs/Ga
✍ F. Scheffer; M. Joseph; W. Prost; F.J. Tegude; H. Lakner; S. Zumkley; G. Wingen; 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 374 KB

Using a low-pressure metal-organic vapour phase epitaxy reactor, Bragg reflector structures were grown consisting of an AIGaAs/GaAs multilayer stack with up to 20 periods on top of a GaAs substrate. Each layer exhibited a constant optical length of a quarter of the desired wavelength. The numerical