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Characteristics of laser diodes with a partially intermixed GaAs-AlGaAs quantum well

โœ Scribed by Nagai, Y.; Shigihara, K.; Karakida, S.; Kakimoto, S.; Otsubo, M.; Ikeda, K.


Book ID
117868076
Publisher
IEEE
Year
1995
Tongue
English
Weight
780 KB
Volume
31
Category
Article
ISSN
0018-9197

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The Cd composition ratio x of the active layer dependence of the lasing wavelength and the temperature dependence of the threshold current were investigated for Zn 1 xCdxSe single-quantum-well laser diodes. The lasing wavelengths varied from 477 nm (blue) for x = 0.15 to 520 nm (green) for x = 0.31