Characteristics of ZnCdSe single-quantum-well laser diodes

✍ Scribed by A. Tsujimura; S. Yoshii; S. Hayashi; K. Ohkawa; T. Mitsuyu; H. Takeishi

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 151 KB
• Volume: 191
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(93)90185-9

✦ Synopsis

The Cd composition ratio x of the active layer dependence of the lasing wavelength and the temperature dependence of the threshold current were investigated for Zn 1 xCdxSe single-quantum-well laser diodes. The lasing wavelengths varied from 477 nm (blue) for x = 0.15 to 520 nm (green) for x = 0.31 at 77 K. A clear reduction in the threshold current was observed by applying high-reflectivity (HR) facet coating. 90%-90% HR coated devices with x = 0.25 lased without arising the carrier leakage up to 250 K under pulsed operation.