## Abstract To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al~__x__~Ga~1β__x__~N double heterostructure (DHβHEMTs) were designed and fabricated by replacing the semiβinsulating GaN buffer with content
Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer
β Scribed by Y. Chen; Y. Jiang; P.Q. Xu; Z.G. Ma; X.L. Wang; T. He; M.Z. Peng; W.J. Luo; X.Y. Liu; L. Wang; H.Q. Jia; H. Chen
- Book ID
- 107457428
- Publisher
- Springer US
- Year
- 2011
- Tongue
- English
- Weight
- 353 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0361-5235
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## Abstract AlGaN/GaN heterostructure fieldβeffect transistors were grown by metalorganic vapor phase epitaxy on Feβdoped GaN substrates with a preflow of the Mg source. We realized a low drain leakage current, 1.05βΒ΅A/mm, at __V__~DS~β=β20βV and __V__~GS~β=ββ5βV with __L__~GD~β=β3βΒ΅m. This leakage