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Improvement in the growth rate of cubic silicon carbide bulk single crystals grown by the sublimation method

โœ Scribed by H.N. Jayatirtha; M.G. Spencer; C. Taylor; W. Greg

Book ID
108342481
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
508 KB
Volume
174
Category
Article
ISSN
0022-0248

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โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 330 KB ๐Ÿ‘ 1 views

The dependence of the growth rate of Sic crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of Sic crys