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ONP investigation of cluster formation in doped silicon single crystals grown by the Czochralski method

✍ Scribed by N.T. Bagraev; L.S. Vlasenko; Yu.A. Karpov


Book ID
107789123
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
238 KB
Volume
50
Category
Article
ISSN
0022-0248

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## Abstract Copper doped InP crystals were synthesized by Bridgman method and further grown by Czochralski technique. Samples of as grown crystals were of n‐type conductivity with the estimated concentration of copper smaller than 5 Γ— 10^15^ cm^–3^. The electron mobility in these samples is largely