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Properties of Doped GaSb Single Crystals Grown by the Czochralski Method

✍ Scribed by Dr. V. Šestáková; B. Štěpánek; J. Šesták

Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
437 KB
Volume
31
Category
Article
ISSN
0232-1300

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✍ Z. Galazka; S. Ganschow; P. Reiche; R. Uecker 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 172 KB

Thermal conditions and rotation rate were examined experimentally for obtaining a flat interface growth of high melting-point oxide (Tb 3 Sc x Al 5-x O 12 -TSAG) by the Czochralski method. The critical crystal rotation rate can be significantly reduced, of about twice at low and very low temperature