Dislocations of salol crystals grown by the Czochralski method
β Scribed by Dr. T. Inoue; Prof. Dr. H. Komatsu; Dr. W. Q. Jim
- Publisher
- John Wiley and Sons
- Year
- 1985
- Tongue
- English
- Weight
- 392 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0232-1300
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## On the Scandium Distribution in Indium Arsenide Crystals Grown by the Czochralski Method I n this paper the behaviour of scandium in n-type monocrystalline indium arsenide grown by Czochralski method in sealed ampoule is studied. The crystals have been grown in [ 11 11 direction under different
Thermal conditions and rotation rate were examined experimentally for obtaining a flat interface growth of high melting-point oxide (Tb 3 Sc x Al 5-x O 12 -TSAG) by the Czochralski method. The critical crystal rotation rate can be significantly reduced, of about twice at low and very low temperature