Investigation of copper doped InP single crystals grown by Czochralski technique for use in X-ray detection

✍ Scribed by Zdansky, K. ;Zavadil, J. ;Pekarek, L. ;Gorodynskyy, V. ;Kozak, H.

• Book ID: 105363051
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 100 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200460420

✦ Synopsis

Abstract

Copper doped InP crystals were synthesized by Bridgman method and further grown by Czochralski technique. Samples of as grown crystals were of n‐type conductivity with the estimated concentration of copper smaller than 5 × 10^15^ cm^–3^. The electron mobility in these samples is largely reduced at low temperatures, which is attributed to a strong scattering of electrons on copper impurities similar to other atomic impurities with partly occupied 3d shells. The samples were converted to p‐type semi‐insulating state after annealing at 500 °C and quenched to room temperature. The energy of copper acceptor causing the semi‐insulating state was determined by temperature dependent Hall measurements as 0.29 eV in agreement with the low temperature photoluminescence spectroscopy. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)