Some impurities are known to modify the properties of grown-in microdefects in Si crystals at relatively low concentrations when the only operating mechanism is trapping of either vacancies (V) or self-interstitials (I), or both, by the major impurity state. First of all, doping affects the critical
✦ LIBER ✦
Theoretical and experimental study of the formation of grown-in and as-grown microdefects in dislocation-free silicon single crystals grown by the Czochralski method
✍ Scribed by N. A. Verezub; A. I. Prostomolotov; M. V. Mezhennyi; M. G. Mil’vidskii; V. Ya. Reznik
- Book ID
- 110144687
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2005
- Tongue
- English
- Weight
- 336 KB
- Volume
- 50
- Category
- Article
- ISSN
- 1063-7745
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